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| NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE(sat) Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features http://onsemi.com 40 VOLTS, 6.0 AMPS COMPLEMENTARY LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 80 mW COLLECTOR 7,8 2 BASE 1 EMITTER 4 BASE 3 EMITTER COLLECTOR 5,6 * Halide Free * This is a Pb-Free Device MAXIMUM RATINGS (TA = 25C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Electrostatic Discharge NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP Symbol VCEO VCBO VEBO IC ICM ESD Max 40 -40 40 -40 6.0 -7.0 3.0 -3.0 6.0 -6.0 Unit Vdc Vdc Vdc A A 8 1 SOIC-8 CASE 751 STYLE 16 DEVICE MARKING 8 C40302 AYWWG G HBM Class 3B MM Class C 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. C40302 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NSS40302PDR2G Package SOIC-8 (Pb-Free) Shipping 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2008 September, 2008 - Rev. 0 1 Publication Order Number: NSS40302P/D NSS40302PDR2G THERMAL CHARACTERISTICS Characteristic SINGLE HEATED Total Device Dissipation (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 2) DUAL HEATED (Note 3) Total Device Dissipation (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 2) Junction and Storage Temperature Range 10 mm2, 1 oz. copper traces, still air. 100 mm2, 1 oz. copper traces, still air. PD 653 5.2 RqJA PD 191 783 6.3 RqJA TJ, Tstg 160 -55 to +150 mW mW/C C/W mW mW/C C/W C PD 576 4.6 RqJA PD 217 676 5.4 RqJA 185 mW mW/C C/W mW mW/C C/W Symbol Max Unit 1. FR-4 @ 2. FR-4 @ 3. Dual heated values assume total power is the sum of two equally powered devices. http://onsemi.com 2 NSS40302PDR2G NPN ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 5) (IC = 10 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) Collector -Emitter Saturation Voltage (Note 5) (IC = 0.1 A, IB = 0.010 A) (IC = 1.0 A, IB = 0.100 A) (IC = 1.0 A, IB = 0.010 A) (IC = 2.0 A, IB = 0.200 A) Base -Emitter Saturation Voltage (Note 5) (IC = 1.0 A, IB = 0.01 A) Base -Emitter Turn-on Voltage (Note 5) (IC = 0.1 A, VCE = 2.0 V) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz) Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. td tr ts tf - - - - - - - - 100 100 780 110 ns ns ns ns hFE 200 200 180 180 - - - - - - 100 - - 400 350 340 320 0.008 0.044 0.080 0.082 0.780 0.650 - 320 40 - - - - V 0.011 0.060 0.115 0.115 V 0.900 V 0.750 MHz - 450 50 pF pF V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Vdc 40 40 6.0 - - - - - - - - Vdc - Vdc - 0.1 0.1 mAdc mAdc Symbol Min Typ Max Unit VCE(sat) VBE(sat) VBE(on) fT Cibo Cobo http://onsemi.com 3 NSS40302PDR2G PNP ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = -40 Vdc, IE = 0) Emitter Cutoff Current (VEB = -6.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 5) (IC = -10 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) (IC = -2.0 A, VCE = -2.0 V) Collector -Emitter Saturation Voltage (Note 5) (IC = -0.1 A, IB = -0.010 A) (IC = -1.0 A, IB = -0.100 A) (IC = -1.0 A, IB = -0.010 A) (IC = -2.0 A, IB = -0.200 A) Base -Emitter Saturation Voltage (Note 5) (IC = -1.0 A, IB = -0.01 A) Base -Emitter Turn-on Voltage (Note 5) (IC = -0.1 A, VCE = -2.0 V) Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) Input Capacitance (VEB = -0.5 V, f = 1.0 MHz) Output Capacitance (VCB = -3.0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay (VCC = -30 V, IC = -750 mA, IB1 = -15 mA) Rise (VCC = -30 V, IC = -750 mA, IB1 = -15 mA) Storage (VCC = -30 V, IC = -750 mA, IB1 = -15 mA) Fall (VCC = -30 V, IC = -750 mA, IB1 = -15 mA) 5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. td tr ts tf - - - - - - - - 60 120 400 130 ns ns ns ns hFE 250 220 180 150 - - - - - - 100 - - 380 340 300 230 -0.013 -0.075 -0.130 -0.135 -0.780 -0.660 - 250 50 - - - - V -0.017 -0.095 -0.170 -0.170 V -0.900 V -0.750 MHz - 300 65 pF pF V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Vdc -40 -40 -7.0 - - - - - - - - Vdc - Vdc - -0.1 -0.1 mAdc mAdc Symbol Min Typ Max Unit VCE(sat) VBE(sat) VBE(on) fT Cibo Cobo http://onsemi.com 4 NSS40302PDR2G NPN TYPICAL CHARACTERISTICS 0.16 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.001 0.01 0.1 1 IC/IB = 10 0.30 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 100 0.25 150C 0.20 0.15 0.10 0.05 0 25C -55C 25C 150C -55C 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 700 600 150C (2.0 V) 500 400 300 150C (5.0 V) VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current IC/IB = 10 hFE, DC CURRENT GAIN -55C 25C 25C (5.0 V) 25C (2.0 V) -55C (5.0 V) 150C 200 -55C (2.0 V) 100 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current 1.0 VBE(on), BASE-EMITTER TURN-ON VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.001 0.01 0.1 1 150C VCE = +2.0 V VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) -55C 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Figure 4. Base Emitter Saturation Voltage vs. Collector Current 100 mA 1A 2A 3A 25C 10 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Ib, BASE CURRENT (A) Figure 5. Base Emitter Turn-On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 5 NSS40302PDR2G NPN TYPICAL CHARACTERISTICS 400 Cibo, INPUT CAPACITANCE (pF) 375 350 325 300 275 250 225 200 175 150 Cibo (pF) Cobo, OUTPUT CAPACITANCE (pF) 80 70 60 50 40 30 20 10 0 5 10 15 20 25 30 35 40 Cobo (pF) 0 1 2 3 4 5 6 VEB, EMITTER-BASE VOLTAGE (V) Vcb, COLLECTOR-BASE VOLTAGE (V) Figure 7. Input Capacitance 10 1s 1.0 Figure 8. Output Capacitance 1 ms 10 ms 100 ms IC (A) 0.1 Thermal Limit 0.01 Single Pulse Test at TA = 25C 0.01 0.1 1.0 VCE (Vdc) 10 100 0.001 Figure 9. Safe Operating Area http://onsemi.com 6 NSS40302PDR2G PNP TYPICAL CHARACTERISTICS 0.25 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.20 0.15 25C 0.10 150C -55C VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.30 IC/IB = 100 0.25 0.20 0.15 0.10 0.05 0 25C -55C 150C 0.05 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Collector Emitter Saturation Voltage vs. Collector Current 800 700 hFE, DC CURRENT GAIN 600 500 400 150C (5.0 V) 150C (2.0 V) 25C (5.0 V) 25C (2.0 V) VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 Figure 11. Collector Emitter Saturation Voltage vs. Collector Current IC/IB = 10 -55C 25C 300 -55C (5.0 V) 200 -55C (2.0 V) 100 0 0.001 0.01 0.1 1 10 150C 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 12. DC Current Gain vs. Collector Current 1.0 VBE(on), BASE-EMITTER TURN-ON VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.001 0.01 0.1 1 150C VCE = -2.0 V VCE(sat), COLLECTOR-EMITTER VOLTAGE (V) -55C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Figure 13. Base Emitter Saturation Voltage vs. Collector Current 100 mA 1A 2A 3A 25C 10 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Ib, BASE CURRENT (A) Figure 14. Base Emitter Turn-On Voltage vs. Collector Current Figure 15. Saturation Region http://onsemi.com 7 NSS40302PDR2G PNP TYPICAL CHARACTERISTICS 350 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 300 250 200 Cibo (pF) 150 100 100 90 80 70 60 50 40 30 0 5 10 15 20 25 30 35 40 Cobo (pF) 0 1 2 3 4 5 6 VEB, EMITTER BASE VOLTAGE (V) Vcb, COLLECTOR BASE VOLTAGE (V) Figure 16. Input Capacitance 10 1s 1.0 Figure 17. Output Capacitance 1 ms 10 ms 100 ms IC (A) 0.1 Thermal Limit 0.01 0.001 Single Pulse Test at TA = 25C 0.01 0.1 1.0 VCE (Vdc) 10 100 Figure 18. Safe Operating Area http://onsemi.com 8 NSS40302PDR2G PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AJ A 8 5 -X- B 1 S 4 0.25 (0.010) M Y M -Y- G K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244 C -Z- H D 0.25 (0.010) M SEATING PLANE N X 45 _ 0.10 (0.004) M J ZY S X S DIM A B C D G H J K M N S SOLDERING FOOTPRINT* 1.52 0.060 STYLE 16: PIN 1. EMITTER, DIE #1 2. BASE, DIE #1 3. EMITTER, DIE #2 4. BASE, DIE #2 5. COLLECTOR, DIE #2 6. COLLECTOR, DIE #2 7. COLLECTOR, DIE #1 8. COLLECTOR, DIE #1 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 9 NSS40302P/D |
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